Coherent quantum oscillations and echo measurements of a Si charge qubit

Zhan Shi, C. B. Simmons, Daniel R. Ward, J. R. Prance, R. T. Mohr, Teck Seng Koh, John King Gamble, Xian Wu, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, and M. A. Eriksson
Phys. Rev. B 88, 075416 – Published 13 August 2013

Abstract

Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127 ps to 2.1 ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise (charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127 to 760 ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.

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  • Received 4 March 2013

DOI:https://doi.org/10.1103/PhysRevB.88.075416

©2013 American Physical Society

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Vol. 88, Iss. 7 — 15 August 2013

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