Abstract
We extend the theory of interfacial plasmon-phonon scattering to top-gated single-layer graphene. As with bottom-gated graphene, interfacial plasmon-phonon (IPP) modes are formed from the coupling between the graphene plasmon and the surface polar phonon modes in the top and bottom oxides. We study the effect of the top oxide thickness on dynamic screening and electron-IPP coupling. The remote phonon-limited electron mobility and electron scattering rates in a HfO-covered, SiO-supported single-layer graphene are computed at various electron densities for different dielectric thickness . We find that is much more dependent on at low . They also agree with the experimentally estimated room temperature from Zou et al. [Phys. Rev. Lett. 105, 126601 (2010)]. The electron density dependent is predicted to be between 5500 and cmVs from to cm at 300 K.
6 More- Received 23 April 2013
DOI:https://doi.org/10.1103/PhysRevB.88.045405
©2013 American Physical Society