Oscillatory relaxation of surface photovoltage on a silicon surface

M. Ogawa, S. Yamamoto, R. Yukawa, R. Hobara, C.-H. Lin, R.-Y. Liu, S.-J. Tang, and I. Matsuda
Phys. Rev. B 87, 235308 – Published 17 June 2013; Erratum Phys. Rev. B 89, 119903 (2014)

Abstract

Time-resolved measurement of photoemission spectroscopy was made to trace a change of surface potential after the surface photovoltage effect on a Si(111) 7×7 surface. Two relaxation processes were found with decay times of nanoseconds and hundreds of nanoseconds, which are explained in terms of the tunneling and the thermionic relaxation schemes, respectively. At the high laser power density, the relaxation has become oscillatory with a temporal period of several tens of nanoseconds.

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  • Received 3 October 2012

DOI:https://doi.org/10.1103/PhysRevB.87.235308

©2013 American Physical Society

Erratum

Erratum: Oscillatory relaxation of surface photovoltage on a silicon surface [Phys. Rev. B 87, 235308 (2013)]

M. Ogawa, S. Yamamoto, R. Yukawa, R. Hobara, C.-H. Lin, R.-Y. Liu, S.-J. Tang, and I. Matsuda
Phys. Rev. B 89, 119903 (2014)

Authors & Affiliations

M. Ogawa1, S. Yamamoto1, R. Yukawa1, R. Hobara1, C.-H. Lin2, R.-Y. Liu2, S.-J. Tang2, and I. Matsuda1,*

  • 1Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
  • 2Department of Physics and Astronomy, National Tsing Hua University, Hsinchu 30013, Taiwan

  • *imatsuda@issp.u-tokyo.ac.jp

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Issue

Vol. 87, Iss. 23 — 15 June 2013

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