Spin injection from a half-metal at finite temperatures

K. D. Belashchenko, J. K. Glasbrenner, and A. L. Wysocki
Phys. Rev. B 86, 224402 – Published 4 December 2012

Abstract

Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown that efficient spin injection from a half-metal is possible as long as the effective resistance of the normal metal does not exceed a characteristic value, which does not depend on the resistance of the half-metallic electrode but, rather, is controlled by spin-flip scattering at the interface. This condition can be formulated as αl/lsfNTc1, where α is the relative deviation of the magnetization from saturation, l and lsfN are the mean-free path and the spin-diffusion length in the nonmagnetic channel, and Tc is the transparency of the tunnel barrier at the interface (if present). The general conclusions are confirmed by tight-binding s-d model calculations. A rough estimate suggests that efficient spin injection from true half-metallic ferromagnets into silicon or copper may be possible at room temperature across a transparent interface.

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  • Received 14 September 2012

DOI:https://doi.org/10.1103/PhysRevB.86.224402

©2012 American Physical Society

Authors & Affiliations

K. D. Belashchenko*, J. K. Glasbrenner, and A. L. Wysocki

  • Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

  • *belashchenko@unl.edu

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Issue

Vol. 86, Iss. 22 — 1 December 2012

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