The remote-phonon-limited mobility for SiO, HfO, h-BN, and AlO is computed using (a) the old approximation in Eq. (1) and (b) the new approximation in Eq. (3). The new approximation yields a mobility that plateaus at high in SiO, h-BN, and AlO.Reuse & Permissions
Figure 2
Temperature dependence of the inverse mobility in the old and new approximation for (a) cm and (b) cm. The results from the old and new approximations are plotted with solid and hollow symbols, respectively.Reuse & Permissions
Figure 3
The remote-phonon-limited mobility computed with different screening models: no screening (triangles), the old approximation (squares), the new approximation (circles), and the FG approximation (diamonds), for (a) AlO and (b) SiO.Reuse & Permissions