Abstract
We find that the Hall effect resistivity () of thin films of LaSrMnO varies as a function of the angle between the applied magnetic field and the film normal as , where increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term , suggesting it is a manifestation of an intrinsic transport property.
- Received 6 September 2012
DOI:https://doi.org/10.1103/PhysRevB.86.184402
©2012 American Physical Society