Abstract
A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional nonparabolic carrier pocket. Based on this model, the symmetries and the band shifts of different carrier pockets are evaluated for BiSb thin films that are grown along different crystalline axes. The phase diagrams for the BiSb thin film systems with different growth orientations are calculated and analyzed.
- Received 13 June 2012
DOI:https://doi.org/10.1103/PhysRevB.86.075436
©2012 American Physical Society