Abstract
We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zinc-blende GaAs nanowires. The optical band gap of wurtzite GaAs is at room temperature, and larger than the GaAs zinc-blende band gap. Raman measurements using incoming light polarized parallel and perpendicular to the wire axis allowed us to investigate the splitting of heavy and light-hole band at the point of .
- Received 5 June 2012
DOI:https://doi.org/10.1103/PhysRevB.86.075317
©2012 American Physical Society