First-principles analysis of photocurrent in graphene PN junctions

Jingzhe Chen, Yibin Hu, and Hong Guo
Phys. Rev. B 85, 155441 – Published 23 April 2012

Abstract

We report on a first-principles investigation of photocurrent generation by graphene PN junctions. The junctions are formed by either chemically doping with nitrogen and boron atoms, or by controlling gate voltages. The nonequilibrium Green's function formalism combined with density functional theory is applied to calculate the photoresponse function. The graphene PN junctions show a broadband photoresponse including the terahertz range. The dependence of the response on the angle between the light polarization vector and the PN interface is determined. Its variation against photon energy Eph is calculated in the visible range. The essential properties of chemically doped and gate-controlled PN junctions are similar, but the former shows fingerprints of dopant distribution.

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  • Received 4 November 2011

DOI:https://doi.org/10.1103/PhysRevB.85.155441

©2012 American Physical Society

Authors & Affiliations

Jingzhe Chen*, Yibin Hu, and Hong Guo

  • Centre for the Physics of Materials and Department of Physics, McGill University, Montreal, PQ, Canada H3A 2T8

  • *chenj@physics.mcgill.ca

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Issue

Vol. 85, Iss. 15 — 15 April 2012

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