Surface relaxation of topological insulators: Influence on the electronic structure

N. Fukui, T. Hirahara, T. Shirasawa, T. Takahashi, K. Kobayashi, and S. Hasegawa
Phys. Rev. B 85, 115426 – Published 20 March 2012

Abstract

The surface structure of topological insulators Bi2Te3(111) and a single bilayer bismuth on it was studied by low-energy electron-diffraction analysis. The topmost quintuple layer of Bi2Te3 showed only a slight relaxation (1% contraction). On the other hand, the bilayer Bi was strongly distorted compared to bulk Bi (3.5 % in-plane contraction and 7% out-of-plane expansion). First-principles calculation reveals that this distortion has a large influence on the electronic structure and can enlarge the band gap.

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  • Received 24 January 2012

DOI:https://doi.org/10.1103/PhysRevB.85.115426

©2012 American Physical Society

Authors & Affiliations

N. Fukui1, T. Hirahara1,*, T. Shirasawa2, T. Takahashi2, K. Kobayashi3, and S. Hasegawa1

  • 1Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 2Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581, Japan
  • 3Department of Physics, Ochanomizu University, 2-1-1 Otsuka, Bunkyo-ku, Tokyo 112-8610, Japan

  • *hirahara@surface.phys.s.u-tokyo.ac.jp

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Vol. 85, Iss. 11 — 15 March 2012

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