Abstract
The surface structure of topological insulators BiTe(111) and a single bilayer bismuth on it was studied by low-energy electron-diffraction analysis. The topmost quintuple layer of BiTe showed only a slight relaxation ( contraction). On the other hand, the bilayer Bi was strongly distorted compared to bulk Bi (3.5 in-plane contraction and out-of-plane expansion). First-principles calculation reveals that this distortion has a large influence on the electronic structure and can enlarge the band gap.
- Received 24 January 2012
DOI:https://doi.org/10.1103/PhysRevB.85.115426
©2012 American Physical Society