Spin accumulation encoded in electronic noise for mesoscopic billiards with finite tunneling rates

J. G. G. S. Ramos, A. L. R. Barbosa, D. Bazeia, and M. S. Hussein
Phys. Rev. B 85, 115123 – Published 27 March 2012

Abstract

We study the effects of spin accumulation (inside reservoirs) on electronic transport with tunneling and reflections at the gates of a quantum dot. Within the stub model, the calculations focus on the current-current correlation function for the flux of electrons injected into the quantum dot. The linear response theory used allows us to obtain the noise power in the regime of thermal crossover as a function of parameters that reveal the spin polarization at the reservoirs. The calculation is performed employing diagrammatic integration within the universal groups (ensembles of Dyson) for a nonideal, nonequilibrium chaotic quantum dot. We show that changes in the spin distribution determine significant alterations in noise behavior at values of the tunneling rates close to zero, in the regime of strong reflection at the gates.

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  • Received 28 August 2011

DOI:https://doi.org/10.1103/PhysRevB.85.115123

©2012 American Physical Society

Authors & Affiliations

J. G. G. S. Ramos1, A. L. R. Barbosa2, D. Bazeia3, and M. S. Hussein1

  • 1Instituto de Estudos Avançados and Instituto de Física, Universidade de São Paulo, C.P. 66318, 05314-970 São Paulo, SP, Brazil
  • 2Unidade Acadêmica de Educação a Distâcia e Tecnologia, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE, Brazil
  • 3Departamento de Física, Universidade Federal da Paraíba, 58051-900 João Pessoa, PB, Brazil

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Issue

Vol. 85, Iss. 11 — 15 March 2012

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