Abstract
Low-temperature annealing of hydrogenated amorphous silicon (-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of -Si:H films and at the interface such layers form with crystalline Si (-Si) surfaces. This finding gives direct physical evidence that the defects determining -Si:H/-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the -Si:H bulk.
- Received 20 July 2011
DOI:https://doi.org/10.1103/PhysRevB.85.113302
©2012 American Physical Society