Abstract
We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at kG, where the magnetoresistivity develops a minimum emerging at K. Unlike the zero-field resistivity which saturates at K, the resistivity at this minimum continues to drop at an accelerated rate to much lower temperatures and becomes several times smaller than the zero-field resistivity. Unexpectedly, we also find that the effect is destroyed not only by increasing temperature but also by modest in-plane magnetic fields. The analysis shows that giant negative magnetoresistance cannot be explained by existing theories considering interaction-induced or disorder-induced corrections.
- Received 15 November 2011
DOI:https://doi.org/10.1103/PhysRevB.85.081304
©2012 American Physical Society