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Giant negative magnetoresistance in high-mobility two-dimensional electron systems

A. T. Hatke, M. A. Zudov, J. L. Reno, L. N. Pfeiffer, and K. W. West
Phys. Rev. B 85, 081304(R) – Published 6 February 2012

Abstract

We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at B1 kG, where the magnetoresistivity develops a minimum emerging at T2 K. Unlike the zero-field resistivity which saturates at T2 K, the resistivity at this minimum continues to drop at an accelerated rate to much lower temperatures and becomes several times smaller than the zero-field resistivity. Unexpectedly, we also find that the effect is destroyed not only by increasing temperature but also by modest in-plane magnetic fields. The analysis shows that giant negative magnetoresistance cannot be explained by existing theories considering interaction-induced or disorder-induced corrections.

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  • Received 15 November 2011

DOI:https://doi.org/10.1103/PhysRevB.85.081304

©2012 American Physical Society

Authors & Affiliations

A. T. Hatke1, M. A. Zudov1,*, J. L. Reno2, L. N. Pfeiffer3, and K. W. West3

  • 1School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA
  • 2Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  • 3Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

  • *zudov@physics.umn.edu

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Issue

Vol. 85, Iss. 8 — 15 February 2012

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