Time-resolved cyclotron resonance in cuprous oxide

Nobuko Naka, Ikuko Akimoto, Masanobu Shirai, and Ken-ichi Kan'no
Phys. Rev. B 85, 035209 – Published 19 January 2012

Abstract

We have demonstrated cyclotron resonance with a temporal resolution of 15 ns by using an electron-spin-resonance cavity. In an undoped direct-gap semiconductor, cuprous oxide, we observe clear low-field shifts of the cyclotron resonance peaks shortly after generation of photoexcited carriers. Based on the plasma shift of the cyclotron resonance, we evaluate the carrier density and quantitatively discuss the interaction between free carriers and excitons. With increasing time delay, the hole resonance asymptotically reaches the constant value corresponding to an effective mass of 0.575 times the free electron mass, providing a definitive answer to the controversy on the effective mass of holes in cuprous oxide.

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  • Received 4 September 2011

DOI:https://doi.org/10.1103/PhysRevB.85.035209

©2012 American Physical Society

Authors & Affiliations

Nobuko Naka1,2, Ikuko Akimoto3, Masanobu Shirai4, and Ken-ichi Kan'no3

  • 1Department of Physics, Kyoto University, Kitshirakawa-Oiwake-cho, Sakyo-ku, Kyoto 606-8502, Japan
  • 2PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
  • 3Department of Materials Science and Chemistry, Wakayama University, Wakayama 640-8510, Japan
  • 4Institute for Integrated Cell-Material Sciences, Kyoto University, Yoshida-Ushinomiya-cho, Sakyo-ku, Kyoto 606-8302, Japan

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Issue

Vol. 85, Iss. 3 — 15 January 2012

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