Electronic structure and transport properties of doped PbSe

Haowei Peng, Jung-Hwan Song, M. G. Kanatzidis, and Arthur J. Freeman
Phys. Rev. B 84, 125207 – Published 13 September 2011

Abstract

Understanding the electronic structure and transport properties of doped PbSe for its thermoelectric applications is an urgent need. Using a first-principles approach, we first explore the band structures of PbSe doped with a series of impurities, including cation-site substitutional impurities (Na, K, Rb; Mg, Ca, Sr; Cu, Ag, Au; Zn, Cd, Hg; Ga, In, Tl; Ge, Sn; As, Sb, Bi) and anion-site substitutional impurities (P, As, Sb; O, S, Te). Then we calculate the density of states (DOS) difference between the doped samples and pure host sample, which is a useful quantity to recognize the possibility of improving transport properties. The exhibited chemical trends and the nature of the impurity states are well explained with a simplified linear combination of atomic orbitals (LCAO) picture. Finally, we calculate the transport properties of these doped systems within the framework of Boltzmann theory and constant relaxation time approximation. Typical competing behavior between the electrical conductivity and Seebeck coefficient is exhibited, and a significant enhancement of thermoelectric power factor is found in the cation-site Au-doped p-type samples, and cation-site As-doped n-type samples.

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  • Received 14 September 2010

DOI:https://doi.org/10.1103/PhysRevB.84.125207

©2011 American Physical Society

Authors & Affiliations

Haowei Peng1,*, Jung-Hwan Song1, M. G. Kanatzidis2, and Arthur J. Freeman1

  • 1Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA
  • 2Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA

  • *haowei-peng@northwestern.edu

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Vol. 84, Iss. 12 — 15 September 2011

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