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Infrared probe of the insulator-to-metal transition in Ga1xMnxAs and Ga1xBexAs

B. C. Chapler, R. C. Myers, S. Mack, A. Frenzel, B. C. Pursley, K. S. Burch, E. J. Singley, A. M. Dattelbaum, N. Samarth, D. D. Awschalom, and D. N. Basov
Phys. Rev. B 84, 081203(R) – Published 26 August 2011
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Abstract

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga1xMnxAs, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be-doped samples, however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.

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  • Received 18 July 2011

DOI:https://doi.org/10.1103/PhysRevB.84.081203

©2011 American Physical Society

Authors & Affiliations

B. C. Chapler1,*, R. C. Myers2, S. Mack3, A. Frenzel1, B. C. Pursley1, K. S. Burch4, E. J. Singley5, A. M. Dattelbaum6, N. Samarth7, D. D. Awschalom3, and D. N. Basov1

  • 1Physics Department, University of California-San Diego, La Jolla, California 92093, USA
  • 2Department of Materials Science and Engineering, Ohio State University, Columbus, Ohio 43210, USA
  • 3Center for Spintronics and Quantum Computation, University of California-Santa Barbara, California 93106, USA
  • 4Department of Physics & Institute for Optical Sciences, University of Toronto, Toronto, Ontario, Canada M5S 1A7
  • 5Department of Physics, California State University-East Bay, Hayward, California 94542, USA
  • 6Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  • 7Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

  • *bchapler@physics.ucsd.edu

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Issue

Vol. 84, Iss. 8 — 15 August 2011

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