Abstract
We present a defect-engineering strategy to optimize the transport properties of the topological insulator BiSe to show a high bulk resistivity and clear quantum oscillations. Starting with a -type BiSe obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a -to--type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition, where a high level of compensation is achieved, the resistivity exceeds 0.5 cm at 1.8 K and we observed two-dimensional Shubnikov–de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.
- Received 10 April 2011
DOI:https://doi.org/10.1103/PhysRevB.84.075316
©2011 American Physical Society