Quantitative analysis of lattice disorder and crystallite size in organic semiconductor thin films

Jonathan Rivnay, Rodrigo Noriega, R. Joseph Kline, Alberto Salleo, and Michael F. Toney
Phys. Rev. B 84, 045203 – Published 7 July 2011

Abstract

The crystallite size and cumulative lattice disorder of three prototypical, high-performing organic semiconducting materials are investigated using a Fourier-transform peak shape analysis routine based on the method of Warren and Averbach (WA). A thorough incorporation of error propagation throughout the multistep analysis and a weighted fitting of Fourier-transformed data to the WA model allows for more accurate results than typically obtained and for determination of confidence bounds. We compare results obtained when assuming two types of column-length distributions, and discuss the benefits of each model in terms of simplicity and accuracy. For strongly disordered materials, the determination of a crystallite size is greatly hindered because disorder dominates the coherence length, not finite size. A simple analysis based on trends of peak widths and Lorentzian components of pseudo-Voigt line shapes as a function of diffraction order is also discussed as an approach to more easily and qualitatively assess the amount and type of disorder present in a sample. While applied directly to organic systems, this methodology is general for the accurate deconvolution of crystalline size and lattice disorder for any material investigated with diffraction techniques.

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  • Received 22 February 2011

DOI:https://doi.org/10.1103/PhysRevB.84.045203

©2011 American Physical Society

Authors & Affiliations

Jonathan Rivnay1, Rodrigo Noriega2, R. Joseph Kline3, Alberto Salleo1, and Michael F. Toney4

  • 1Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
  • 2Applied Physics, Stanford University, Stanford, California 94305, USA
  • 3National Institute for Standards and Technology, Gaithersburg, Maryland 20899, USA
  • 4Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA

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Issue

Vol. 84, Iss. 4 — 15 July 2011

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