Formation of step-state bands on Si(111) 3×3Ag vicinal surfaces

H. Minoda, H. Yazawa, M. Morita, S. N. Takeda, and H. Daimon
Phys. Rev. B 83, 035419 – Published 24 January 2011

Abstract

The effects of the step configuration and step density on the surface conductivity of Si(111) vicinal surfaces were investigated using an ultrahigh-vacuum electron microscope equipped with a surface conductivity measurement system. The Si(111)3×3-Ag structure, which has a nearly-free-electron-like two-dimensional metallic surface state, was formed on the Si(111) terraces. The conductivity of the samples increased with increasing step density, which cannot be explained by assuming that steps form a barrier to electron conduction through the surface-state bands. The step density can affect the electronic band structure of the system through the formation of step-state bands or by changes in the band bending. The electronic band structure of the Si(111)3×3-Ag surface prepared on vicinal surfaces was investigated by angle-resolved photoemission spectroscopy (ARPES) to examine these two possibilities. The ARPES investigation shows that the bulk bands are not modified and step-state bands are created on vicinal surfaces with high step densities. The electronic states of neighboring steps overlap to form step-state bands as the step-step distance is approached on a vicinal surface with high step density.

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  • Received 19 May 2010

DOI:https://doi.org/10.1103/PhysRevB.83.035419

© 2011 American Physical Society

Authors & Affiliations

H. Minoda* and H. Yazawa

  • Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

M. Morita, S. N. Takeda, and H. Daimon

  • Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan

  • *Corresponding author: hminoda@cc.tuat.ac.jpfig

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Issue

Vol. 83, Iss. 3 — 1 January 2011

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