Ferroelectric dead layer driven by a polar interface

Y. Wang, M. K. Niranjan, K. Janicka, J. P. Velev, M. Ye. Zhuravlev, S. S. Jaswal, and E. Y. Tsymbal
Phys. Rev. B 82, 094114 – Published 22 September 2010

Abstract

Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the two interfaces that serve as doping layers. We find that the polar interfaces create an intrinsic electric field that is screened by the electron charge leaking into the BaTiO3 layer. The amount of the leaking charge is controlled by the boundary conditions which are different for three heterostructures considered, namely, vacuum/LaO/BaTiO3/LaO, LaO/BaTiO3, and SrRuO3/LaO/BaTiO3/LaO. The intrinsic electric field forces ionic displacements in BaTiO3 to produce the electric polarization directed into the interior of the BaTiO3 layer. This creates a ferroelectric dead layer near the interfaces that is nonswitchable and thus detrimental to ferroelectricity. Our first-principles and model calculations demonstrate that the effect is stronger for a larger effective ionic charge at the interface and longer screening length due to a stronger intrinsic electric field that penetrates deeper into the ferroelectric. The predicted mechanism for a ferroelectric dead layer at the interface controls the critical thickness for ferroelectricity in systems with polar interfaces.

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  • Received 8 April 2010

DOI:https://doi.org/10.1103/PhysRevB.82.094114

©2010 American Physical Society

Authors & Affiliations

Y. Wang1, M. K. Niranjan1, K. Janicka1, J. P. Velev2, M. Ye. Zhuravlev3, S. S. Jaswal1, and E. Y. Tsymbal1

  • 1Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, USA
  • 2Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931, USA
  • 3Kurnakov Institute for General and Inorganic Chemistry, Russian Academy of Sciences, 119991 Moscow, Russia

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Issue

Vol. 82, Iss. 9 — 1 September 2010

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