Abstract
Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation in the peak intensity as a function of the applied gate voltage. In this Rapid Communication we provide a unified theoretical framework which accounts for both these effects and unveils the occurrence of a switching mechanism between symmetric and antisymmetric phonon modes as dominant channel in the optical response. A complete phase diagram of the optical phonon response is also presented, as a function of both the charge density and the band gap.
- Received 16 June 2010
DOI:https://doi.org/10.1103/PhysRevB.82.041402
©2010 American Physical Society