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Doping of few-layered graphene and carbon nanotubes using ion implantation

U. Bangert, A. Bleloch, M. H. Gass, A. Seepujak, and J. van den Berg
Phys. Rev. B 81, 245423 – Published 18 June 2010
Physics logo See Synopsis: A clean way to impure carbon

Abstract

Doping of nanostructured materials using a clean, efficient, and site-selective route such as ion implantation would be hugely desirable for realization of large-scale production methods. Here, ion implantation is used to create uniform impurity-atom densities which are both dose and spatially controlled within multiwalled carbon nanotubes and graphene. The technique is demonstrated for a range of dopants, including silver, representing a likely candidate for optical enhancement, and boron, which is predicted to introduce a plasmon within the visible-frequency regime. Electron energy-loss spectroscopy performed within an aberration-corrected scanning transmission electron microscope, in combination with high-angle-annular-dark-field imaging, is used to pinpoint and identify the bonding configuration of single foreign species within the matrix.

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  • Received 11 November 2009

DOI:https://doi.org/10.1103/PhysRevB.81.245423

©2010 American Physical Society

Synopsis

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A clean way to impure carbon

Published 18 June 2010

Controlled doping of nanotubes and graphene sheets is achieved through an ion implantation technique.

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Authors & Affiliations

U. Bangert1,*, A. Bleloch2, M. H. Gass2, A. Seepujak1, and J. van den Berg3

  • 1School of Materials Science, University of Manchester, Grosvenor Street, Manchester M1 7HS, United Kingdom
  • 2School of Engineering, University of Liverpool, Liverpool L69 3BX, United Kingdom
  • 3School of Computing, Science and Engineering, University of Salford, Salford, Greater Manchester M5 4WT, United Kingdom

  • *ursel.bangert@manchester.ac.uk

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Issue

Vol. 81, Iss. 24 — 15 June 2010

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