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Microscopic mechanism of martensitic stabilization in shape-memory alloys: Atomic-level processes

Junkai Deng, Xiangdong Ding, Turab Lookman, Tetsuro Suzuki, Kazuhiro Otsuka, Jun Sun, Avadh Saxena, and Xiaobing Ren
Phys. Rev. B 81, 220101(R) – Published 17 June 2010

Abstract

Aging in martensite, which is accompanied by a gradual change in physical properties, has been observed in most shape-memory alloys for more than half a century. However, its microscopic mechanism has remained controversial due to a lack of experiments that can probe the atomic-level processes. By using a method which combines molecular-dynamics and Monte Carlo simulations, we clarify the atomic mechanism for one of the well-observed martensitic aging effects, martensitic stabilization. We successfully reproduce the observed effects using our method. Quantitative analysis of the atomic configurations during aging reveals that martensite stabilization is not associated with a change in the average martensite structure. It involves instead a gradual change in the short-range order of point defects so that the defect short-range order tends to adopt the same “symmetry” as the crystal symmetry of the host martensite lattice. Our simulation results are consistent with the symmetry-conforming short-range order model [X. Ren and K. Otsuka, Nature (London) 389, 579 (1997)].

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  • Received 8 February 2010

DOI:https://doi.org/10.1103/PhysRevB.81.220101

©2010 American Physical Society

Authors & Affiliations

Junkai Deng1,2, Xiangdong Ding1,3,*, Turab Lookman3, Tetsuro Suzuki2, Kazuhiro Otsuka2, Jun Sun1, Avadh Saxena3, and Xiaobing Ren2,†

  • 1Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology and State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
  • 2Ferroic Physics Group, National Institute for Materials Science, Tsukuba, 305-0047 Ibaraki, Japan
  • 3Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

  • *Corresponding author. dingxd@mail.xjtu.edu.cn
  • Corresponding author. ren.xiaobing@nims.go.jp

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Issue

Vol. 81, Iss. 22 — 1 June 2010

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