Abstract
We probe spin transport in by measuring spin-valve effect in and epitaxial heterostructures. In systems, we find that a fraction of out-of-equilibrium spin-polarized carrier actually travel across the layer up to distances of almost 100 nm at low temperature. The corresponding spin-diffusion length is estimated around 40 nm. Furthermore, we find that the insertion of a tunneling barrier does not improve spin injection, likely due to the matching of resistances at the interfaces. Our result on may be likely improved, both in terms of crystalline quality and submicrometric morphology and in terms of device geometry, indicating that is a potential material for efficient spin transport in devices based on crystalline oxides.
3 More- Received 14 December 2009
DOI:https://doi.org/10.1103/PhysRevB.81.165311
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