Abstract
We study the spatiotemporal pattern of the near-field intensity correlations generated by parametric scattering processes in a planar optical cavity. A generalized Bogolubov–de Gennes model is used to compute the second-order field correlation function. Analytic approximations are developed to understand the numerical results in the different regimes. The correlation pattern is found to be robust against a realistic disorder for state-of-the-art semiconductor systems.
1 More- Received 21 October 2009
DOI:https://doi.org/10.1103/PhysRevB.81.075320
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