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Sequential vortex hopping in an array of artificial pinning centers

J. C. Keay, P. R. Larson, K. L. Hobbs, M. B. Johnson, J. R. Kirtley, O. M. Auslaender, and K. A. Moler
Phys. Rev. B 80, 165421 – Published 22 October 2009
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Abstract

We use low-temperature magnetic force microscopy (MFM) to study the hopping motion of vortices in an array of artificial pinning centers (APCs). The array consists of nanoscale holes etched in a niobium thin film by Ar-ion sputtering through an anodic aluminum-oxide template. Variable-temperature magnetometry shows a transition temperature of 7.1 K and an enhancement of the magnetization up to the third matching field at 5 K. Using MFM with attractive and repulsive tip-vortex interaction, we measure the vortex-pinning strength and investigate the motion of individual vortices in the APC array. The depinning force for individual vortices at low field ranged from 0.7 to 1.2 pN. The motion of individual vortices was found to be reproducible and consistent with movement between adjacent holes in the film. The movements are repeatable but the sequence of hops depends on the scan direction. This asymmetry in the motion indicates nonuniform local pinning, a consequence of array disorder and hole-size variation.

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  • Received 29 July 2009

DOI:https://doi.org/10.1103/PhysRevB.80.165421

©2009 American Physical Society

Authors & Affiliations

J. C. Keay1,*, P. R. Larson1, K. L. Hobbs1, M. B. Johnson1, J. R. Kirtley2,3, O. M. Auslaender3,4,†, and K. A. Moler3,4

  • 1Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019, USA
  • 2IBM Research Division, Yorktown Heights, New York 10598, USA
  • 3Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
  • 4Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA

  • *Corresponding author; keay@nhn.ou.edu
  • Present address: Department of Physics, Technion–Israel Institute of Technology, Haifa 32000, Israel.

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Issue

Vol. 80, Iss. 16 — 15 October 2009

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