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Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy

Nasim Alem, Rolf Erni, Christian Kisielowski, Marta D. Rossell, Will Gannett, and A. Zettl
Phys. Rev. B 80, 155425 – Published 12 October 2009
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Abstract

We present a method to prepare monolayer and multilayer suspended sheets of hexagonal boron nitride (h-BN), using a combination of mechanical exfoliation and reactive ion etching. Ultrahigh-resolution transmission electron microscope imaging is employed to resolve the atoms, and intensity profiles for reconstructed phase images are used to identify the chemical nature (boron or nitrogen) of every atom throughout the sample. Reconstructed phase images are distinctly different for h-BN multilayers of even or odd number. Unusual triangular defects and zigzag and armchair edge reconstructions are uniquely identified and characterized.

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  • Received 19 June 2009

DOI:https://doi.org/10.1103/PhysRevB.80.155425

©2009 American Physical Society

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Reaching a new resolution standard with electron microscopy

Published 12 October 2009

A new approach to reduce spherical and chromatic aberration in electron microscopy allows for low-energy imaging of single-layer boron nitride, a novel 2D nanostructure that is analogous to graphene.

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Authors & Affiliations

Nasim Alem1,2, Rolf Erni3,4, Christian Kisielowski3,4, Marta D. Rossell3,4, Will Gannett1,3, and A. Zettl1,2,3,*

  • 1Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
  • 2Center of Integrated Nanomechanical Systems, University of California at Berkeley, Berkeley, California 94720, USA
  • 3Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 4National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *Author to whom correspondence should be addressed. azettl@berkeley.edu

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Issue

Vol. 80, Iss. 15 — 15 October 2009

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