Ab initio procedure for constructing effective models of correlated materials with entangled band structure

Takashi Miyake, Ferdi Aryasetiawan, and Masatoshi Imada
Phys. Rev. B 80, 155134 – Published 27 October 2009

Abstract

In a previous work [Phys. Rev. B 77, 085122 (2008)], a procedure for constructing low-energy models of electrons in solids was proposed. The procedure starts with dividing the Hilbert space into two subspaces: the low-energy part (“d space”) and the rest of the space (“r space”). The low-energy model is constructed for the d space by eliminating the degrees of freedom of the r space. The thus derived model contains the strength of electron correlation expressed by a partially screened Coulomb interaction, calculated in the constrained random-phase approximation (cRPA), where screening channels within the d space, Pd, are subtracted. One conceptual problem of this established downfolding method is that for entangled bands it is not clear how to cut out the d space and how to distinguish Pd from the total polarization. Here, we propose a simple procedure to overcome this difficulty. The d space is defined to be an isolated set of bands generated from a set of maximally localized Wannier basis, which consequently defines Pd. The r subspace is constructed as the complementary space orthogonal to the d subspace, resulting in two sets of completely disentangled bands. Using these disentangled bands, the effective parameters of the d space are uniquely determined by the cRPA method. The method is successfully applied to 3d transition metals.

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  • Received 5 June 2009

DOI:https://doi.org/10.1103/PhysRevB.80.155134

©2009 American Physical Society

Authors & Affiliations

Takashi Miyake1,2, Ferdi Aryasetiawan3,2, and Masatoshi Imada4,2

  • 1Research Institute for Computational Sciences, AIST, Tsukuba 305-8568, Japan
  • 2Japan Science and Technology Agency, CREST, Kawaguchi 332-0012, Japan
  • 3Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522 Japan
  • 4Department of Applied Physics, University of Tokyo, Hongo, Tokyo 113-8656, Japan

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Issue

Vol. 80, Iss. 15 — 15 October 2009

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