Phonons in Disordered Si-Ge Alloys

Vipin Srivastava and S. K. Joshi
Phys. Rev. B 8, 4671 – Published 15 November 1973
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Abstract

The coherent-potential approximation for phonons in disordered binary alloys has been used to interpret the observed Raman spectra of the substitutionally disordered Si-Ge alloys. The spectral density function is calculated for the q=0 optical phonons.

  • Received 30 April 1973

DOI:https://doi.org/10.1103/PhysRevB.8.4671

©1973 American Physical Society

Authors & Affiliations

Vipin Srivastava and S. K. Joshi

  • Physics Department, Roorkee University, Roorkee, India

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Issue

Vol. 8, Iss. 10 — 15 November 1973

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