Multiple configurations of the two excess 4f electrons on defective CeO2(111): Origin and implications

Hui-Ying Li, Hai-Feng Wang, Xue-Qing Gong, Yang-Long Guo, Yun Guo, Guanzhong Lu, and P. Hu
Phys. Rev. B 79, 193401 – Published 6 May 2009

Abstract

Density-functional theory calculations have been carried out to systematically study single surface oxygen vacancies on CeO2(111). It is surprisingly found that multiple structures with the two excess electrons localized at different positions can exist. We show that the origin of the multiconfigurations of 4f electrons is a result of geometric relaxation on the surface and strong localization characteristic of 4f electrons in ceria. The importance of 4f electron structures is also presented and discussed. These results may possess implications for our understanding of materials with f electrons.

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  • Received 16 February 2009

DOI:https://doi.org/10.1103/PhysRevB.79.193401

©2009 American Physical Society

Authors & Affiliations

Hui-Ying Li1, Hai-Feng Wang1, Xue-Qing Gong1, Yang-Long Guo1, Yun Guo1, Guanzhong Lu1, and P. Hu2

  • 1Labs for Advanced Materials, Research Institute of Industrial Catalysis, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, People’s Republic of China
  • 2School of Chemistry and Chemical Engineering, The Queen’s University of Belfast, Belfast BT9 5AG, United Kingdom

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Issue

Vol. 79, Iss. 19 — 15 May 2009

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