Abstract
We report a high-pressure tetragonal PbO-type structure of ZnO predicted through ab initio lattice-dynamics calculation. This structure can be directly transformed from NaCl structure along an orthorhombic transition path and can be viewed as alternatively stacked layers of cations and anions with the anion layer composed of zigzag arranged anionic rows. Enthalpy curve calculation suggests that is stable in a large pressure range of 236–316 GPa, above which CsCl structure takes over. Band-structure calculation reveals that this polymorph is a wide band-gap semiconductor with an energy gap larger than 2.95 eV.
- Received 18 December 2008
DOI:https://doi.org/10.1103/PhysRevB.79.193201
©2009 American Physical Society