Abstract
Huge negative values of both the thermopower, at 10 K, and the Nernst coefficient, at 7.5 K, are observed for , a narrow-gap semiconductor showing strong indications of correlation effects. A semiquantitative interpretation based on electron diffusion is presented, which suggests that the dominant term in , although electronic in origin, is enhanced by a factor larger than 10. This is ascribed to the presence of electron-electron correlations in and excludes phonon drag as the dominating mechanism for the large thermopower. The correlation-enhanced thermoelectricity is of great interest for theoretical exploration as well as potential application in cooling devices at cryogenic temperatures.
- Received 3 April 2009
DOI:https://doi.org/10.1103/PhysRevB.79.153308
©2009 American Physical Society