Abstract
Epitaxial carbon was grown by heating silicon carbide (SiC) to high temperatures in vacuum. A continuous graphene surface layer was formed at temperatures above . X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The XPS studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. STM studies revealed a wide variety of nanometer-scale features that include sharp carbon-rich ridges, moiré superlattices, one-dimensional line defects, and grain boundaries. By imaging these features with atomic-scale resolution, considerable insight into the growth mechanisms of FLG on the carbon face of SiC is obtained.
2 More- Received 7 October 2008
DOI:https://doi.org/10.1103/PhysRevB.79.125411
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