Insights into few-layer epitaxial graphene growth on 4H-SiC(0001¯) substrates from STM studies

Laura B. Biedermann, Michael L. Bolen, Michael A. Capano, Dmitry Zemlyanov, and Ronald G. Reifenberger
Phys. Rev. B 79, 125411 – Published 6 March 2009
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Abstract

Epitaxial carbon was grown by heating (0001¯) silicon carbide (SiC) to high temperatures (14501600°C) in vacuum. A continuous graphene surface layer was formed at temperatures above 1475°C. X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The XPS studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. STM studies revealed a wide variety of nanometer-scale features that include sharp carbon-rich ridges, moiré superlattices, one-dimensional line defects, and grain boundaries. By imaging these features with atomic-scale resolution, considerable insight into the growth mechanisms of FLG on the carbon face of SiC is obtained.

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  • Received 7 October 2008

DOI:https://doi.org/10.1103/PhysRevB.79.125411

©2009 American Physical Society

Authors & Affiliations

Laura B. Biedermann1,2, Michael L. Bolen3,2, Michael A. Capano3,2, Dmitry Zemlyanov2, and Ronald G. Reifenberger1,2

  • 1Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA
  • 2Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
  • 3School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907, USA

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Issue

Vol. 79, Iss. 12 — 15 March 2009

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