Tight-binding description of the quasiparticle dispersion of graphite and few-layer graphene

A. Grüneis, C. Attaccalite, L. Wirtz, H. Shiozawa, R. Saito, T. Pichler, and A. Rubio
Phys. Rev. B 78, 205425 – Published 19 November 2008

Abstract

A universal set of third-nearest-neighbor tight-binding (TB) parameters is presented for calculation of the quasiparticle (QP) dispersion of N stacked sp2 graphene layers (N=1) with AB stacking sequence. The present TB parameters are fit to ab initio calculations on the GW level and are universal, allowing to describe the whole π “experimental” band structure with one set of parameters. This is important for describing both low-energy electronic transport and high-energy optical properties of graphene layers. The QP bands are strongly renormalized by electron-electron interactions, which results in a 20% increase in the nearest-neighbor in-plane and out-of-plane TB parameters when compared to band structure from density-functional theory. With the new set of TB parameters we determine the Fermi surface and evaluate exciton energies, charge carrier plasmon frequencies, and the conductivities which are relevant for recent angle-resolved photoemission, optical, electron energy loss, and transport measurements. A comparision of these quantitities to experiments yields an excellent agreement. Furthermore we discuss the transition from few-layer graphene to graphite and a semimetal to metal transition in a TB framework.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
6 More
  • Received 9 August 2008

DOI:https://doi.org/10.1103/PhysRevB.78.205425

©2008 American Physical Society

Authors & Affiliations

A. Grüneis1,2,*, C. Attaccalite3,4, L. Wirtz4, H. Shiozawa5, R. Saito6, T. Pichler1, and A. Rubio3

  • 1Faculty of Physics, University of Vienna, Strudlhofgasse 4, 1090 Wien, Austria
  • 2IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany
  • 3Departamento de Fisica de Materiales, Donostia International Physics Center, Spain European Theoretical Spectroscopy Facility (ETSF), E-20018 San Sebastian, Spain
  • 4Institute for Electronics, Microelectronics, and Nanotechnology (CNRS UMR 8520), Department ISEN, 59652 Villeneuve d’Ascq, France
  • 5Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, United Kingdom
  • 6Department of Physics, Tohoku University, Aoba, Sendai, 980-8578, Japan

  • *Corresponding author. alexander.grueneis@univie.ac.at

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 78, Iss. 20 — 15 November 2008

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×