Abstract
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. As the magnetic anisotropy in GaMnAs substantially changes as a function of temperature , the ratio of the magnetoelastic and the magnetocrystalline anistropies can be tuned from approximately 1/4 to 4. Thus, GaMnAs/piezoelectric actuator hybrids are an ideal model system for the investigation of different piezoelastic magnetization control regimes. At the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of loops are shifted as a function of at this temperature. At 50 K—where the magnetoelastic term dominates the magnetic anisotropy—we are able to tune the magnetization orientation by about solely by means of the electrical voltage applied. Furthermore, we derive the magnetostrictive constant as a function of temperature and find values consistent with earlier results. We argue that the piezo voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo voltage-induced irreversible magnetization switching at , which constitutes the basic principle of a nonvolatile memory element.
9 More- Received 7 April 2008
DOI:https://doi.org/10.1103/PhysRevB.78.045203
©2008 American Physical Society