Measurements of the energy band gap and valence band structure of AgSbTe2

V. Jovovic and J. P. Heremans
Phys. Rev. B 77, 245204 – Published 10 June 2008

Abstract

The de Haas-van Alphen effect, galvanomagnetic and thermomagnetic properties of high-quality crystals of AgSbTe2 are measured and analyzed. The transport properties reveal the material studied here to be a very narrow-gap semiconductor (Eg7.6±3meV) with 5×1019cm3 holes in a valence band with a high density of states and thermally excited 1017cm3 high-mobility (2200cm2/Vs) electrons at 300 K. The quantum oscillations are measured with the magnetic field oriented along the 111 axis. Taken together with the Fermi energy derived from the transport properties, the oscillations confirm the calculated valence band structure composed of 12 half-pockets located at the X-points of the Brillouin zone, six with a density-of-states effective mass mda0.21me and six with mdb0.55me, giving a total density-of-states effective mass, including Fermi pocket degeneracy, of md1.7±0.2me (me is the free electron mass). The lattice term dominates the thermal conductivity, and the electronic contribution in samples with both electrons and holes present is in turn dominated by the ambipolar term. The low thermal conductivity and very large hole mass of AgSbTe2 make it a most promising p-type thermoelectric material.

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  • Received 31 March 2008

DOI:https://doi.org/10.1103/PhysRevB.77.245204

©2008 American Physical Society

Authors & Affiliations

V. Jovovic

  • Department of Mechanical Engineering, The Ohio State University, Columbus, Ohio 43210, USA

J. P. Heremans

  • Department of Mechanical Engineering and Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA

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Issue

Vol. 77, Iss. 24 — 15 June 2008

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