Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, and A. Fontcuberta i Morral
Phys. Rev. B 77, 155326 – Published 28 April 2008

Abstract

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40μm.

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  • Received 30 January 2008

DOI:https://doi.org/10.1103/PhysRevB.77.155326

©2008 American Physical Society

Authors & Affiliations

C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, and A. Fontcuberta i Morral

  • Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

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Issue

Vol. 77, Iss. 15 — 15 April 2008

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