Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

E. H. Hwang and S. Das Sarma
Phys. Rev. B 77, 115449 – Published 27 March 2008

Abstract

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e., gated or doped with a tunable and finite carrier density) two-dimensional graphene layers as a function of temperature (T) and carrier density (n). We find a temperature-dependent phonon-limited resistivity ρph(T) to be linear in temperature for T50K with the room-temperature intrinsic mobility reaching the values of above 105cm2Vs. We comment on the low-temperature Bloch–Grüneisen behavior where ρph(T)T4 for unscreened electron-phonon coupling.

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  • Received 8 November 2007

DOI:https://doi.org/10.1103/PhysRevB.77.115449

©2008 American Physical Society

Authors & Affiliations

E. H. Hwang and S. Das Sarma

  • Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA

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Issue

Vol. 77, Iss. 11 — 15 March 2008

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