Abstract
We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e., gated or doped with a tunable and finite carrier density) two-dimensional graphene layers as a function of temperature and carrier density . We find a temperature-dependent phonon-limited resistivity to be linear in temperature for with the room-temperature intrinsic mobility reaching the values of above . We comment on the low-temperature Bloch–Grüneisen behavior where for unscreened electron-phonon coupling.
- Received 8 November 2007
DOI:https://doi.org/10.1103/PhysRevB.77.115449
©2008 American Physical Society