Abstract
We report the significant improvement of the ferroelectric properties of thin film through control of electrical leakage by Nb doping. A very large remanent electrical polarization value of was observed in thin film on substrate. The doping effect of Nb in reducing the movable charge density due to oxygen vacancies in was confirmed by the dielectric measurements. A very small loss was observed in the Nb and La codoped thin film. As well as the improvement in the ferroelectric properties, the magnetic moment was also enhanced due to the doping of La.
- Received 30 November 2007
DOI:https://doi.org/10.1103/PhysRevB.77.092101
©2008 American Physical Society