Optically induced dynamics of muonium centers in Si studied via their precession signatures

I. Fan, K. H. Chow, B. Hitti, R. Scheuermann, W. A. MacFarlane, A. I. Mansour, B. E. Schultz, M. Egilmez, J. Jung, and R. L. Lichti
Phys. Rev. B 77, 035203 – Published 7 January 2008

Abstract

We studied the influence of the optical excitation on three muonium centers MuT0, MuBC0, and MuBC+ in high resistivity silicon. These investigations were carried out on the spin precession signature of each center as a function of temperature. It is found that photoexcitation resulted in significant enhancements of the depolarization rates of the precession signals as the three muonium centers underwent interactions with photogenerated free carriers. The results are described by a three-state model involving transitions between MuT0, MuBC0, and MuBC+ as well as spin exchange processes.

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  • Received 20 September 2007

DOI:https://doi.org/10.1103/PhysRevB.77.035203

©2008 American Physical Society

Authors & Affiliations

I. Fan1,*, K. H. Chow1,†, B. Hitti2, R. Scheuermann3, W. A. MacFarlane4, A. I. Mansour1, B. E. Schultz1, M. Egilmez1, J. Jung1, and R. L. Lichti5

  • 1Department of Physics, University of Alberta, Edmonton, Alberta, Canada T6G 2G7
  • 2TRIUMF, 4004 Wesbrook Mall, Vancouver, British Columbia, Canada V6T 2A3
  • 3Paul Scherrer Institute, CH-5232 Villigen, PSI Switzerland
  • 4Department of Chemistry, University of British Columbia, Vancouver, British Columbia, Canada V6T 1Z1
  • 5Department of Physics, Texas Tech University, Lubbock, Texas 79409-1051, USA

  • *ifan@phys.ualberta.ca
  • kimchow@phys.ualberta.ca

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Vol. 77, Iss. 3 — 15 January 2008

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