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Random telegraph noise from magnetic nanoclusters in the ferromagnetic semiconductor (Ga,Mn)As

M. Zhu, X. Li, G. Xiang, and N. Samarth
Phys. Rev. B 76, 201201(R) – Published 5 November 2007

Abstract

Measurements of the low-frequency electrical noise in the ferromagnetic semiconductor (Ga,Mn)As reveal an enhanced integrated noise at low temperature. For moderate localization, we find a 1f normalized power spectrum density over the entire range of temperatures studied (4.2K<T<70K). However, for stronger localization and a high density of Mn interstitials, we observe Lorentzian noise spectra accompanied by random telegraph noise. Magnetic field dependence and annealing studies suggest that interstitial Mn defects couple with substitutional Mn atoms to form nanoscale magnetic clusters characterized by a net moment of 20μB whose fluctuations modulate hole transport.

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  • Received 13 August 2007

DOI:https://doi.org/10.1103/PhysRevB.76.201201

©2007 American Physical Society

Authors & Affiliations

M. Zhu, X. Li, G. Xiang, and N. Samarth*

  • Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

  • *nsamarth@psu.edu

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Issue

Vol. 76, Iss. 20 — 15 November 2007

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