Abstract
Single pairs of vertically stacked asymmetric pairs of InP quantum dots embedded in GaInP barriers have been investigated as a function of interdot spacer thickness. Time integrated and time-resolved photoluminescence measurements have been performed, with the former showing a change in the intensity ratio between the two dots and the latter an increasing difference in the photoluminescence decay time of the two dots when reducing the spacer thickness. Hence, we suggest transitions from vanishing tunnel coupling to electron tunneling and, finally, to electron and hole tunneling for decreasing barrier widths. The different times are estimated from the measurement data, and the changes are described by a rate equation model. The results clearly show the nonresonant character of the tunneling process as a result of the different ground state energies (approximately ) of the unequally sized dots.
- Received 1 March 2007
DOI:https://doi.org/10.1103/PhysRevB.76.085338
©2007 American Physical Society