Abstract
We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a boron atom, and the other centered above a BN ring. The resulting inequivalence of the two carbon sites leads to the opening of a gap of at the Dirac points of graphene and to finite masses for the Dirac fermions. Alternative orientations of the graphene sheet on the BN substrate generate similar band gaps and masses. The band gap induced by the BN surface can greatly improve room temperature pinch-off characteristics of graphene-based field effect transistors.
- Received 16 April 2007
- Corrected 23 August 2007
DOI:https://doi.org/10.1103/PhysRevB.76.073103
©2007 American Physical Society
Corrections
23 August 2007