Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations

Gianluca Giovannetti, Petr A. Khomyakov, Geert Brocks, Paul J. Kelly, and Jeroen van den Brink
Phys. Rev. B 76, 073103 – Published 16 August 2007

Abstract

We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (hBN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a boron atom, and the other centered above a BN ring. The resulting inequivalence of the two carbon sites leads to the opening of a gap of 53meV at the Dirac points of graphene and to finite masses for the Dirac fermions. Alternative orientations of the graphene sheet on the BN substrate generate similar band gaps and masses. The band gap induced by the BN surface can greatly improve room temperature pinch-off characteristics of graphene-based field effect transistors.

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  • Received 16 April 2007
  • Corrected 23 August 2007

DOI:https://doi.org/10.1103/PhysRevB.76.073103

©2007 American Physical Society

Corrections

23 August 2007

Erratum

Publisher's Note: Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations [Phys. Rev. B 76, 073103 (2007)]

Gianluca Giovannetti, Petr A. Khomyakov, Geert Brocks, Paul J. Kelly, and Jeroen van den Brink
Phys. Rev. B 76, 079902 (2007)

Authors & Affiliations

Gianluca Giovannetti1,2, Petr A. Khomyakov2, Geert Brocks2, Paul J. Kelly2, and Jeroen van den Brink1,3

  • 1Instituut-Lorentz for Theoretical Physics, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands
  • 2Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
  • 3Institute for Molecules and Materials, Radboud Universiteit Nijmegen, P.O. Box 9010, 6500 GL, Nijmegen, The Netherlands

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Issue

Vol. 76, Iss. 7 — 15 August 2007

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