Electronic bonding transition in compressed SiO2 glass

Jung-Fu Lin, Hiroshi Fukui, David Prendergast, Takuo Okuchi, Yong Q. Cai, Nozomu Hiraoka, Choong-Shik Yoo, Andrea Trave, Peter Eng, Michael Y. Hu, and Paul Chow
Phys. Rev. B 75, 012201 – Published 5 January 2007

Abstract

Knowledge of the electronic structure of amorphous and liquid silica at high pressures is essential to understanding their complex properties ranging from silica melt in magma to silica glass in optics, electronics, and material science. Here we present oxygen near K-edge spectra of SiO2 glass to 51GPa obtained using x-ray Raman scattering in a diamond-anvil cell. The x-ray Raman spectra below 10GPa are consistent with those of quartz and coesite, whereas the spectra above 22GPa are similar to that of stishovite. This pressure-induced spectral change indicates an electronic bonding transition occurring from a fourfold quartzlike to a sixfold stishovitelike configuration in SiO2 glass between 10GPa and 22GPa. In contrast to the irreversible densification, the electronic bonding transition is reversible upon decompression. The observed reversible bonding transition and irreversible densification call for a coherent understanding of the transformation mechanism in compressed SiO2 glass.

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  • Received 7 September 2006

DOI:https://doi.org/10.1103/PhysRevB.75.012201

©2007 American Physical Society

Authors & Affiliations

Jung-Fu Lin1, Hiroshi Fukui2, David Prendergast3,4, Takuo Okuchi5, Yong Q. Cai6, Nozomu Hiraoka6, Choong-Shik Yoo1, Andrea Trave1, Peter Eng7, Michael Y. Hu8, and Paul Chow8

  • 1Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550, USA
  • 2Institute for Study of the Earth’s Interior, Okayama University, Yamada 827, Misasa, Tottori 682-0193, Japan
  • 3Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
  • 4Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 5Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8601, Japan
  • 6National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
  • 7Consortium for Advanced Radiation Sources, The University of Chicago, Chicago, Illinois 60637, USA
  • 8HPCAT, Carnegie Institution of Washington, Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, USA

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Issue

Vol. 75, Iss. 1 — 1 January 2007

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