Abstract
Oxidation of silicon during the growth of silicon oxide by ion beam sputter deposition was studied by in situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure at various deposition temperatures below . At low temperatures, the variation of incorporated oxygen content is similar to a dissociative adsorption isotherm of on Si indicating that the surface-confined reaction of the deposited Si atoms with the adsorbed oxygen atoms is the main process. However, it shows a three-step variation with the oxygen partial pressure at high temperatures. The evolution of species confirmed by the XPS indicates that an adsorption-induced surface reaction and a diffusion-induced internal reaction are the main pathways for the Si oxidation.
- Received 25 April 2006
DOI:https://doi.org/10.1103/PhysRevB.74.153305
©2006 American Physical Society