Abstract
The electronic structure of -type antiferromagnetic insulator is investigated by the GW approximation. The band gap and spectrum are in a good agreement with experimental observation. The lifetime of electrons in conduction bands is much shorter than that of holes in valence bands. The insulator-to-metal transition with antiferromagnetic-to-ferromagnetic transition with photocarrier injection is attributed to the characteristic properties of excited electron states in -type antiferromagnetic perovskite systems. The onsite Coulomb interaction is strongly screened at the low energy region by mobile electrons.
- Received 1 September 2005
DOI:https://doi.org/10.1103/PhysRevB.74.064417
©2006 American Physical Society