Abstract
Time-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage, and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be reproducibly controlled in the cryostat using three- and four-point bending applied with a mechanical vise. We find that the magnitude of the spin splitting increases linearly with applied tension and voltage. A strain-drift-diffusion model is used to determine the value of the spin-strain coupling coefficient for a strained GaAs epilayer.
- Received 28 March 2006
DOI:https://doi.org/10.1103/PhysRevB.73.241316
©2006 American Physical Society