First-principles approach to the charge-transport characteristics of monolayer molecular-electronics devices: Application to hexanedithiolate devices

Yong-Hoon Kim, Jamil Tahir-Kheli, Peter A. Schultz, and William A. Goddard, III
Phys. Rev. B 73, 235419 – Published 21 June 2006

Abstract

We report on the development of an accurate first-principles computational scheme for the charge transport characteristics of molecular monolayer junctions and its application to hexanedithiolate (C6DT) devices. Starting from the Gaussian basis set density-functional calculations of a junction model in the slab geometry and corresponding two bulk electrodes, we obtain the transmission function using the matrix Green’s function method and analyze the nature of transmission channels via atomic projected density of states. Within the developed formalism, by treating isolated molecules with the supercell approach, we can investigate the current-voltage characteristics of single and parallel molecular wires in a consistent manner. For the case of single C6DT molecules stretched between Au(111) electrodes, we obtain reasonable quantitative agreement of computed conductance with a recent scanning tunneling microscope experiment result. Comparing the charge transport properties of C6DT single molecules and their monolayer counterparts in the stretched and tilted geometries, we find that the effect of intermolecular coupling and molecule tilting on the charge transport characteristics is negligible in these devices. We contrast this behavior to that of the π-conjugated biphenyldithiolate devices we have previously considered and discuss the relative importance of molecular cores and molecule-electrode contacts for the charge transport in those devices.

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  • Received 5 December 2005

DOI:https://doi.org/10.1103/PhysRevB.73.235419

©2006 American Physical Society

Authors & Affiliations

Yong-Hoon Kim1,*, Jamil Tahir-Kheli2, Peter A. Schultz3, and William A. Goddard, III2,†

  • 1Korea Institute for Advanced Study, 207-43 Cheongnyangni 2-dong, Dongdaemun-gu, Seoul, 130-722 Korea
  • 2Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125-7400, USA
  • 3Multiscale Computational Materials Methods Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

  • *Author to whom correspondence should be addressed. Electronic address: yhkim@kias.re.kr
  • Electronic address: wag@wag.caltech.edu

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Issue

Vol. 73, Iss. 23 — 15 June 2006

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