Abstract
Positron annihilation spectroscopy, supported by ab initio theory, has been applied to verify the decoration of Ga vacancies in by oxygen and hydrogen. Our results indicate that the Doppler broadening measurement of electron momentum distribution is sensitive enough to distinguish even between N and O atoms neighboring the Ga vacancy. We identify isolated in electron irradiated and complexes in highly O-doped high-purity . Evidence of H decoration of Ga vacancies is obtained in epitaxial grown by metalorganic chemical-vapor deposition.
- Received 27 February 2006
DOI:https://doi.org/10.1103/PhysRevB.73.193301
©2006 American Physical Society