Temperature influence on the production of nanodot patterns by ion beam sputtering of Si(001)

R. Gago, L. Vázquez, O. Plantevin, J. A. Sánchez-García, M. Varela, M. C. Ballesteros, J. M. Albella, and T. H. Metzger
Phys. Rev. B 73, 155414 – Published 11 April 2006

Abstract

The temperature influence (T=300625K) on the production of nanodot patterns by 1keV Ar+ ion beam sputtering (IBS) of Si(001) is addressed. The surface morphology was studied by atomic force microscopy, transmission electron microscopy, and grazing x-ray scattering techniques. Three different T regimes are observed: (i) First, the pattern does not change significantly up to 425K, with the nanodot volume being mostly crystalline. (ii) Second, in the 425525K range, the pattern is still present but the nanodot height decreases with T and the crystalline core contribution to the dot morphology progressively diminishes. This trend is accompanied by a continuous decrease of the average interdot distance and an emerging strain in the crystalline lattice of the nanostructures. Above 500K, the pattern is mainly dominated by the amorphous surface layer. (iii) Finally, the pattern formation is precluded above 550K, yielding a flat and featureless surface. These results not only have technological implications regarding the control over the pattern characteristics, but also provide relevant information to contrast the existing theories of pattern formation by IBS.

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  • Received 26 October 2005

DOI:https://doi.org/10.1103/PhysRevB.73.155414

©2006 American Physical Society

Authors & Affiliations

R. Gago1,*, L. Vázquez2, O. Plantevin3,4, J. A. Sánchez-García2, M. Varela5,†, M. C. Ballesteros5, J. M. Albella2, and T. H. Metzger4

  • 1Centro de Micro-Análisis de Materiales and Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
  • 2Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid, Spain
  • 3CSNSM CNRS/IN2P3, Université Paris-Sud, UMR8609, ORSAY-Campus, F-91405 Orsay Cedex, France
  • 4Anomalous Scattering Beamline (ID-01), European Synchrotron Radiation Facility, F-38043 Grenoble Cedex, France
  • 5Departamento de Física, Universidad Carlos III de Madrid, E-28911 Leganés, Spain

  • *Corresponding author. Present address: Centro de Micro-Análisis de Materiales, Universidad Autónoma De Madrid, c/Faraday 3 (Edificio 22), Campus de Cantoblanco, 28049 Madrid Spain. Electronic address: raul.gago@uam.es
  • Present address: Oak Ridge National Laboratory, Oak Ridge, Tennesse 37830-6031, USA.

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Vol. 73, Iss. 15 — 15 April 2006

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